SRAM semiconductor device with a compressive stress-inducing...

Details SRAM semiconductor device with a compressive stress-inducing... SRAM semiconductor device with a compressive stress-inducing...

2006-09-11

2010-11-09

Fahmy, Wael M (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S903000, C257SE27064, C257SE27098

Reexamination Certificate

active

07829956

ABSTRACT:
Both a compressive-stress-applying insulating film and a tensile-stress-applying insulating film cover an N-type MIS transistor formed at an SRAM access region of a semiconductor substrate. On the other hand, a tensile-stress-applying insulating film covers an N-type MIS transistor formed at an SRAM drive region of the semiconductor substrate.

REFERENCES:
patent: 6984564 (2006-01-01), Huang et al.
patent: 2003/0181005 (2003-09-01), Hachimine et al.
patent: 2004/0159905 (2004-08-01), Sato
patent: 2005/0285202 (2005-12-01), Huang et al.
patent: 2006/0046400 (2006-03-01), Burbach et al.
patent: 2006/0226490 (2006-10-01), Burnett et al.
patent: 2002-76182 (2002-03-01), None
patent: 2003-273240 (2003-09-01), None

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