Structure for a trench capacitor

Details Structure for a trench capacitor Structure for a trench capacitor

2007-11-08

2010-12-07

Nguyen, Khiem D (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S248000, C257SE21396, C257SE29346

Reexamination Certificate

active

07846791

ABSTRACT:
A design structure of a trench capacitor with an isolation collar in a semiconductor substrate where the substrate adjacent to the isolation collar is free of dopants caused by auto-doping. The design structure resulting from the means for fabricating the trench capacitor includes the methods of forming a trench in the semiconductor substrate; depositing a dielectric layer on a sidewall of the trench; filling the trench with a first layer of undoped polysilicon; etching away the first layer of undoped polysilicon and the dielectric layer from an upper section of the trench whereby the semiconductor substrate is exposed at the sidewall in the upper section of the trench; forming an isolation collar layer on the sidewall in the upper section of the trench; and filling the trench with a second layer of doped polysilicon.

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