Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-11-28
2010-12-07
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S326000, C257SE21442, C257SE29309, C257SE21692, C257SE27103, C438S287000, C365S148000, C365S185010
Reexamination Certificate
active
07847342
ABSTRACT:
A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a first columnar semiconductor layer extending in a direction perpendicular to a substrate and having a first hollow extending downward from its upper end; a first insulation layer formed in contact with the outer wall of the first columnar semiconductor layer; a second insulation layer formed on the inner wall of the first columnar semiconductor layer so as to leave the first hollow; and a plurality of first conductive layers formed to sandwich the first insulation layer with the first columnar semiconductor layer and functioning as control electrodes of the memory cells.
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Aochi Hideaki
Fukuzumi Yoshiaki
Katsumata Ryota
Kidoh Masaru
Kito Masaru
Kabushiki Kaisha Toshiba
Moore Whitney
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Purvis Sue
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