Semiconductor device and method for manufacturing the same

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C257S369000, C257SE21632, C257SE29345

Reexamination Certificate

active

07816198

ABSTRACT:
A semiconductor device and method of manufacturing thereof. The semiconductor device has at least one NMOS device and at least one PMOS device provided on a substrate. An electron channel of the NMOS device is aligned with a first direction. A hole channel of the PMOS device is aligned with a different second direction that forms an acute angle with respect to the first direction.

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patent: 2004/0051143 (2004-03-01), Oh et al.
patent: 2004/0217448 (2004-11-01), Kumagai et al.
patent: 2005/0001290 (2005-01-01), Chan et al.
patent: 2005/0139929 (2005-06-01), Rost
patent: 2006/0202277 (2006-09-01), Hierlemann et al.
patent: 2006/0237785 (2006-10-01), Ieong et al.
patent: 2008/0308847 (2008-12-01), Xiong et al.

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