Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-07-10
2010-10-19
Dickey, Thomas L (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S369000, C257SE21632, C257SE29345
Reexamination Certificate
active
07816198
ABSTRACT:
A semiconductor device and method of manufacturing thereof. The semiconductor device has at least one NMOS device and at least one PMOS device provided on a substrate. An electron channel of the NMOS device is aligned with a first direction. A hole channel of the PMOS device is aligned with a different second direction that forms an acute angle with respect to the first direction.
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Huber Anton
Kamp Winfried
Ostermayr Martin
Banner & Witcoff , Ltd.
Dickey Thomas L
Erdem Fazli
Infineon - Technologies AG
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