Semiconductor device with bulb type recess gate and method...

Details Semiconductor device with bulb type recess gate and method... Semiconductor device with bulb type recess gate and method...

2007-06-26

2010-06-22

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S701000, C438S637000, C438S638000, C438S340000, C438S270000, C438S277000, C438S259000, C257S296000, C257SE29200, C257SE29201, C257SE21545, C257SE21549

Reexamination Certificate

active

07741223

ABSTRACT:
A method for fabricating a semiconductor device includes etching a substrate to form a first recess having a micro trench, etching the substrate disposed under the first recess to form a second recess having a profile substantially vertical and a width greater than a portion of the first recess where no micro trench is formed, etching the substrate disposed under the second recess to form a third recess having a profile substantially spherical, and forming a gate pattern over a resultant recess including the first to third recesses.

REFERENCES:
patent: 5891807 (1999-04-01), Muller et al.
patent: 6605838 (2003-08-01), Mandelman et al.
patent: 7582532 (2009-09-01), Han et al.
patent: 2006/0237817 (2006-10-01), Park
patent: 2007/0155101 (2007-07-01), Lee et al.
patent: 2007/0281455 (2007-12-01), Kim
patent: 2008/0023753 (2008-01-01), Choi et al.
patent: 2008/0079068 (2008-04-01), Kim
patent: 2008/0081421 (2008-04-01), Lim et al.
patent: 2008/0160699 (2008-07-01), Lee et al.
patent: 2009/0114999 (2009-05-01), Seo et al.
patent: 1020030032118 (2003-04-01), None

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