Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-10-28
2010-10-26
Such, Matthew W (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S284000, C257SE21415, C257SE21444
Reexamination Certificate
active
07820513
ABSTRACT:
A nonplanar semiconductor device and its method of fabrication is described. The nonplanar semiconductor device includes a semiconductor body having a top surface opposite a bottom surface formed above an insulating substrate wherein the semiconductor body has a pair laterally opposite sidewalls. A gate dielectric is formed on the top surface of the semiconductor body on the laterally opposite sidewalls of the semiconductor body and on at least a portion of the bottom surface of semiconductor body. A gate electrode is formed on the gate dielectric, on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of semiconductor body and beneath the gate dielectric on the bottom surface of the semiconductor body. A pair source/drain regions are formed in the semiconductor body on opposite sides of the gate electrode.
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Chau Robert S.
Datta Suman
Doyle Brian S.
Hareland Scott A.
Linton Tom
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Such Matthew W
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