Method of forming a low resistance semiconductor contact and...

Details Method of forming a low resistance semiconductor contact and... Method of forming a low resistance semiconductor contact and...

2005-09-23

2010-06-15

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S268000, C438S291000, C438S527000, C438S533000, C438S597000, C438S648000, C438S649000, C438S650000, C438S651000, C438S655000, C438S656000, C438S682000, C438S683000

Reexamination Certificate

active

07736984

ABSTRACT:
In one embodiment, silicide layers are formed on two oppositely doped adjacent semiconductor regions. A conductor material is formed electrically contacting both of the two silicides.

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