Non-volatile memory device, non-volatile memory system and...

Static information storage and retrieval – Read/write circuit – Multiplexing

Reexamination Certificate

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C365S185110, C365S185160, C365S230030, C365S238500, C365S239000

Reexamination Certificate

active

07859914

ABSTRACT:
The control method includes a step of varying driving ability of a selector transistor which selects a diffusion layer in a selected memory cell and a diffusion layer of at least one non-selected memory cell which adjoins to the selected memory cell when the selected memory cell makes transition from a memory cell at one end to a memory cell at other end within a memory block.

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patent: 2006128594 (2006-05-01), None

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