Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2009-02-20

2010-12-28

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S619000, C438S421000, C257S369000, C257SE21632

Reexamination Certificate

active

07858480

ABSTRACT:
A semiconductor device according to one embodiment includes: a semiconductor substrate comprising an element isolation region; two gate electrodes formed in substantially parallel on the semiconductor substrate via respective gate insulating films; two channel regions each formed in regions of the semiconductor substrate under the two gate electrodes; a source/drain region formed in a region of the semiconductor substrate sandwiching the two channel regions; a first stress film formed so as to cover the semiconductor substrate and the two gate electrodes; and a second stress film formed in at least a portion of a void, the void being formed in a region between the two gate electrodes.

REFERENCES:
patent: 2003/0008492 (2003-01-01), Jung et al.
patent: 2005/0285202 (2005-12-01), Huang et al.
patent: 2007/0045674 (2007-03-01), Komoda
patent: 2007/0090395 (2007-04-01), Sebe et al.
patent: 2007/0117370 (2007-05-01), Chen et al.
patent: 2007-150238 (2007-06-01), None

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