Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-06-23
2010-11-23
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S288000, C257S347000, C257S366000, C257SE27096, C365S182000
Reexamination Certificate
active
07838942
ABSTRACT:
A semiconductor structure that includes at least one logic device region and at least one static random access memory (SRAM) device region wherein each device region includes a double gated field effect transistor (FET) wherein the back gate of each of the FET devices is doped to a specific level so as to improve the performance of the FET devices within the different device regions is provided. In particular, the back gate within the SRAM device region is more heavily doped than the back gate within the logic device region. In order to control short channel effects, the FET device within the logic device region includes a doped channel, while the FET device within the SRAM device region does not. A none uniform lateral doping profile with a low net doping beneath the source/drain regions and a high net doping underneath the channel would provide additional SCE control for the logic device.
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Dennard Robert H.
Haensch Wilfried E.
Kumar Arvind
Miller Robert J.
Alexanian Vazken
Diaz José R
International Business Machines - Corporation
Parker Kenneth A
Scully , Scott, Murphy & Presser, P.C.
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