Modified gold-tin system with increased melting temperature...

Details Modified gold-tin system with increased melting temperature... Modified gold-tin system with increased melting temperature...

2006-09-22

2010-12-21

Picardat, Kevin M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S766000

Reexamination Certificate

active

07855459

ABSTRACT:
A semiconductor structure and a bonding method are disclosed that includes a device wafer, a substrate wafer, and a metal bonding system between the device wafer and the substrate wafer. The metal bonding system includes gold, tin, and nickel, and includes at least one discrete layer of gold and tin that is at least about 88 percent gold by weight.

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