Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-01
2010-02-23
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21165
Reexamination Certificate
active
07666786
ABSTRACT:
A semiconductor device is fabricated by forming a gate electrode structure, comprising a gate oxide layer pattern, a polysilicon layer pattern, and sidewall spacers on a silicon substrate, forming source/drain regions on both sides of the gate electrode structure in the silicon substrate, depositing a physical vapor deposition (PVD) cobalt layer on the gate electrode structure using PVD, depositing a chemical vapor deposition (CVD) cobalt layer on the PVD cobalt layer using CVD, annealing the silicon substrate to react the PVD and CVD cobalt layers with polysilicon on an upper surface of the gate electrode structure, stripping at least a portion of the PVD cobalt layer and the CVD cobalt layer that has not reacted, and annealing the silicon substrate after stripping the at least the portion of the PVD cobalt layer and the CVD cobalt layer.
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Notice to Submit Response for Korean Application No. 10-2004-0014958, dated Aug. 22, 2005.
Cheong Seong-hwee
Choi Gil-heyun
Jung Sug-woo
Kim Hyun-su
Sohn Woong-hee
Coleman W. David
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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