Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-15
2010-11-09
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S458000, C257SE21675, C257S638000, C257SE29133
Reexamination Certificate
active
07829400
ABSTRACT:
In fabricating a semiconductor device, an element forming surface formation step of forming a plurality of element forming surfaces of different heights on a semiconductor layer to have different levels, a semiconductor element formation step of forming a plurality of semiconductor elements and, one in each of a corresponding number of regions of the semiconductor layer, each region including an associated one of the plurality of element forming surfaces, a level-difference compensation insulating film formation step of forming a level-difference compensation insulating film on the semiconductor layer to cover the semiconductor elements and have a surface with different levels along the element forming surfaces, a release layer formation step of forming a release layer in the semiconductor layer by ion-implanting a peeling material through the level-difference compensation insulating film into the semiconductor layer, and a separation step of separating part of the semiconductor layer along the release layer are performed.
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International Search Report mailed Feb. 21, 2006 (English and Japanese Text).
Second and Supplementary Notice mailed May 18, 2007.
Bruel et al.: “Smart-Cut: A new Silicon On Insulator Material Technology Based on Hydrogen Implantation and Wafer Bonding,” Jpn. J. Appl. Phys. vol. 36 (1997), pp. 1636-1641, Part 1, No. 3B, Mar. 1997.
Fukushima Yasumori
Moriguchi Masao
Takafuji Yutaka
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
Singal Ankush K
Toledo Fernando L
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