Method for producing a trench transistor and trench transistor

Details Method for producing a trench transistor and trench transistor Method for producing a trench transistor and trench transistor

2006-08-30

2010-10-19

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S272000, C438S259000, C438S589000, C257SE29260, C257SE29257, C257SE29262, C257S331000, C257S332000

Reexamination Certificate

active

07816210

ABSTRACT:
A method is disclosed for producing a trench transistor which has at least two trenches with in each case a field electrode arranged therein and a gate electrode arranged therein. In the method, it is provided to implement the trenches with different trench widths and then to produce the field electrodes by filling up the trenches with an electrode material and subsequent cutting back of the electrode material. The different trench width leads to different etching rates during the cutting back of the electrode material, and thus to field electrodes which are spaced apart from a top edge of the trenches by different amounts. Following this, the gate electrodes are produced which, due to the different dimensions of the field electrodes, extend into the trenches to a different depth, resulting in different gate capacitances for the gate electrodes in the two trenches.

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patent: 10234 996 (2003-10-01), None

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