Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2009-09-01

2010-08-24

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S286000, C438S288000, C438S954000, C257SE21423

Reexamination Certificate

active

07781291

ABSTRACT:
A semiconductor device includes a memory section formed at a semiconductor substrate and including a first transistor having an ONO film that can store charges between the semiconductor substrate and a memory electrode and a first STI region for isolating the first transistor, and a CMOS section formed at the semiconductor substrate and including a second transistor having a CMOS electrode and a gate dielectric and a second STI region for isolating the second transistor. The height of the top surface of the first STI region is set equal to or smaller than the height of the top surface of the second STI region.

REFERENCES:
patent: 6486033 (2002-11-01), Tu et al.
patent: 6872667 (2005-03-01), Shieh et al.
patent: 6921947 (2005-07-01), Furuta et al.
patent: 7217619 (2007-05-01), Knoefler
patent: 2001/0006244 (2001-07-01), Shimizu et al.
patent: 2002/0130382 (2002-09-01), Shimizu et al.
patent: 2002/0195647 (2002-12-01), Aritome
patent: 2003/0030097 (2003-02-01), Lee et al.
patent: 2003/0194841 (2003-10-01), Inoue et al.
patent: 2004/0113229 (2004-06-01), Gonzalez et al.
patent: 2004/0147099 (2004-07-01), Hashimoto et al.
patent: 2001-077220 (2001-03-01), None
patent: 2002-043442 (2002-02-01), None
patent: 2003-142656 (2003-05-01), None
patent: 2004-247633 (2004-09-01), None
patent: 2005-123348 (2005-05-01), None
Japanese Office Action, with English translation, issued in Japanese Patent Application No. JP 2004-308646, mailed Oct. 7, 2008.

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