Nonvolatile memory cell comprising a diode and a...

Details Nonvolatile memory cell comprising a diode and a... Nonvolatile memory cell comprising a diode and a...

2006-03-31

2010-10-12

Hoang, Quoc D (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE45004

Reexamination Certificate

active

07812404

ABSTRACT:
In a novel nonvolatile memory cell formed above a substrate, a diode is paired with a reversible resistance-switching material, preferably a metal oxide or nitride such as, for example, NixOy, NbxOy, TixOy, HFxOy, AlxOy, MgxOy, CoxOy, CrxOy, VxOy, ZnxOy, ZrxOy, BxNy, and AlxNy. In preferred embodiments, the diode is formed as a vertical pillar disposed between conductors. Multiple memory levels can be stacked to form a monolithic three dimensional memory array. In some embodiments, the diode comprises germanium or a germanium alloy, which can be deposited and crystallized at relatively low temperatures, allowing use of aluminum or copper in the conductors. The memory cell of the present invention can be used as a rewriteable memory cell or a one-time-programmable memory cell, and can store two or more data states.

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