Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2000-06-06
2010-10-12
Alejandro, Luz L. (Department: 1716)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C216S067000, C216S068000, C216S079000, C438S714000
Reexamination Certificate
active
07811941
ABSTRACT:
A method and a device suitable for implementing this method for etching a substrate (10), a silicon body in particular, using an inductively coupled plasma (14) are proposed. For this purpose, a radio-frequency electromagnetic alternating field is generated with an ICP source (13), the alternating field generating an inductively coupled plasma (14) of reactive particles in a reactor (15). The inductively coupled plasma (14) arises by the action of the radio-frequency electromagnetic alternating field on a reactive gas. Furthermore, a device is provided with which a plasma power injected into the inductively coupled plasma (14) via the radio-frequency electromagnetic alternating field with the ICP source (13) is capable of being pulsed so that at least from time to time a pulsed radio-frequency power can be injected into the inductively coupled plasma (14) as a pulsed radio-frequency power. In addition, the pulsed plasma power can be combined or correlated with a pulsed magnetic field and/or a pulsed substrate electrode power.
REFERENCES:
patent: 4935661 (1990-06-01), Heinecke et al.
patent: 5501893 (1996-03-01), Laermer et al.
patent: 5558718 (1996-09-01), Leung
patent: 5567268 (1996-10-01), Kadomura
patent: 5662819 (1997-09-01), Kadomura
patent: 5683538 (1997-11-01), O'Neill et al.
patent: 5779925 (1998-07-01), Hashimoto et al.
patent: 5880034 (1999-03-01), Keller
patent: 5928528 (1999-07-01), Kubota et al.
patent: 5935373 (1999-08-01), Koshimizu
patent: 5997687 (1999-12-01), Koshimizu
patent: 6020794 (2000-02-01), Wilbur
patent: 6085688 (2000-07-01), Lymberopoulos et al.
patent: 6217785 (2001-04-01), Collins et al.
patent: 6720273 (2004-04-01), Becker et al.
patent: 42 41 045 (1996-03-01), None
patent: 197 34 278 (1999-02-01), None
patent: 199 00 179 (2000-02-01), None
patent: 199 19 832 (2000-11-01), None
patent: 199 27 806 (2001-01-01), None
patent: 0 840 350 (1998-05-01), None
patent: 1 203 396 (2002-05-01), None
patent: 8088218 (1996-04-01), None
patent: 8-222549 (1996-08-01), None
patent: 9-55347 (1997-02-01), None
patent: 10 064696 (1998-03-01), None
patent: 10079372 (1998-03-01), None
patent: 11-26433 (1999-01-01), None
patent: WO 97 14177 (1997-04-01), None
patent: WO 98/37577 (1998-08-01), None
patent: WO 00/79579 (2000-12-01), None
patent: WO 01/06540 (2001-01-01), None
Becker Volker
Laermer Franz
Schilp Andrea
Alejandro Luz L.
Kenyon & Kenyon LLP
Robert & Bosch GmbH
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