Semiconductor devices with enlarged recessed gate electrodes

Details Semiconductor devices with enlarged recessed gate electrodes Semiconductor devices with enlarged recessed gate electrodes

2006-11-03

2009-06-02

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S330000, C438S243000, C438S244000

Reexamination Certificate

active

07541656

ABSTRACT:
A semiconductor device includes a semiconductor substrate having a recess therein. A gate insulator is disposed on the substrate in the recess. The device further includes a gate electrode including a first portion on the gate insulator in the recess and a second reduced-width portion extending from the first portion. A source/drain region is disposed in the substrate adjacent the recess. The recess may have a curved shape, e.g., may have hemispherical or ellipsoid shape. The source/drain region may include a lighter-doped portion adjoining the recess. Relate fabrication methods are also discussed.

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Notice to File a Response/Amendment to the Examination Report, Korean Application No. 10-2002-0081091, Nov. 22, 2004.

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