Semiconductor device and manufacturing method for the same

Details Semiconductor device and manufacturing method for the same Semiconductor device and manufacturing method for the same

2006-04-03

2009-12-22

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S475000, C438S476000, C257SE21041

Reexamination Certificate

active

07635631

ABSTRACT:
In a semiconductor substrate on which are formed an N-type MOS transistor and a P-type MOS transistor, the gate electrode of the N-type MOS transistor comprises a tungsten film, which makes contact with a gate insulation film, and the gate electrode of the P-type MOS transistor comprises a tungsten film, which makes contact with a gate insulation film, and the concentration of carbon contained in the former tungsten film is less than the concentration of carbon contained in the latter tungsten film.

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