Method of forming CMOS with Si:C source/drain by laser...

Details Method of forming CMOS with Si:C source/drain by laser... Method of forming CMOS with Si:C source/drain by laser...

2007-09-24

2009-10-06

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S204000, C257SE21454, C257SE21619

Reexamination Certificate

active

07598147

ABSTRACT:
A method of forming crystalline Si:C in source and drain regions is provided. After formation of shallow trench isolation and gate electrodes of field effect transistors, gate spacers are formed on gate electrodes. Preamorphization implantation is performed in the source and drain regions, followed by carbon implantation. The upper portion of the source and drain regions comprises an amorphous mixture of silicon, germanium, and/or carbon. An anti-reflective layer is deposited to enhance the absorption of a laser beam into the silicon substrate. The laser beam is scanned over the silicon substrate including the upper source and drain region with the amorphous mixture. The energy of the laser beam is controlled so that the temperature of the semiconductor substrate is above the melting temperature of the amorphous mixture but below the glass transition temperature of silicon oxide so that structural integrity of the semiconductor structure is preserved.

REFERENCES:
patent: 2007/0269951 (2007-11-01), Lu et al.
patent: 2008/0160683 (2008-07-01), Vanderpool et al.
Ang, K.W., et al., “Enhanced Performance in 50 nm N-MOSFETs with Silicon-Carbon Source/Drain Regions”, IEDM Tech Dig., pp. 1069-1071, 2004.

Affiliated with

Also associated with

Rating

Method of forming CMOS with Si:C source/drain by laser... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming CMOS with Si:C source/drain by laser..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming CMOS with Si:C source/drain by laser... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4142341