Non-volatile memory device including nitrogen pocket...

Details Non-volatile memory device including nitrogen pocket... Non-volatile memory device including nitrogen pocket...

2006-05-02

2009-12-29

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S262000, C438S526000, C257SE21422

Reexamination Certificate

active

07638393

ABSTRACT:
In a non-volatile memory structure, the source/drain regions are surrounded by a nitrogen-doped region. As a result, an interface between the substrate and the charge trapping layer above the nitrogen-doped region is passivated by a plurality of nitrogen atoms. The nitrogen atoms can improve data retention, and performance of cycled non-volatile memory devices.

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Shimizu, et al., 0.15um CMOS Process for High Performance and High Reliability, IEEE Electron Dvice Letters, 1994, 7 pages.

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