Method of forming trench-gate electrode for FinFET device

Details Method of forming trench-gate electrode for FinFET device Method of forming trench-gate electrode for FinFET device

2005-02-18

2009-02-10

Menz, Douglas M (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S329000, C257SE21336

Reexamination Certificate

active

07488650

ABSTRACT:
A FinFET device having a trench-gate electrode, and a method of manufacture, is provided. The trench-gate electrode may be fabricated by forming a mask layer on a substrate having a semiconductor layer, e.g., silicon, formed thereon. A trench is formed in the mask layer and fins are formed in the exposed region of the underlying semiconductor layer. A gate electrode may be formed in the trench by, for example, depositing a gate electrode material such that the trench is filled, planarizing the surface to the surface of the mask layer, and optionally forming a recess in the surface of the gate electrode. Spacers may be formed in the trench and an optional gate dielectric layer may be formed over the fins prior to depositing the gate electrode material. Raised source and drain regions may be used by using selective epitaxial growth processes.

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