Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-16
2009-02-10
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S328000
Reexamination Certificate
active
07489002
ABSTRACT:
Structures and fabrication methods for a memory are provided. The memory includes an array of memory cells, where each memory cell has a pillar extending outwardly from a substrate. The pillar includes a first contact layer and a second contact layer separated by an insulating layer. A transistor is formed along side of the pillar. A plurality of buried bit lines are formed of semiconductor material and disposed below the pillars in the array memory cells to interconnect the first contact layer of column adjacent pillars in the array of memory cells. In an embodiment, each word line of a plurality of word lines is disposed orthogonally to the plurality of buried bit lines in a trench between rows of the pillars to address gates of the transistors that are adjacent to the trench.
REFERENCES:
patent: 4051354 (1977-09-01), Choate
patent: 4604162 (1986-08-01), Sobczak
patent: 4864375 (1989-09-01), Teng et al.
patent: 4896293 (1990-01-01), McElroy
patent: 4920065 (1990-04-01), Chin et al.
patent: 4926224 (1990-05-01), Redwine
patent: 4954854 (1990-09-01), Dhong et al.
patent: 4958318 (1990-09-01), Harari
patent: 4987089 (1991-01-01), Roberts
patent: 5006909 (1991-04-01), Kosa
patent: 5010386 (1991-04-01), Groover
patent: 5017504 (1991-05-01), Nishimura et al.
patent: 5021355 (1991-06-01), Dhong et al.
patent: 5028977 (1991-07-01), Kenneth et al.
patent: 5037773 (1991-08-01), Lee et al.
patent: 5053351 (1991-10-01), Fazan et al.
patent: 5057896 (1991-10-01), Gotou
patent: 5072269 (1991-12-01), Hieda
patent: 5110752 (1992-05-01), Lu
patent: 5122848 (1992-06-01), Lee et al.
patent: 5135879 (1992-08-01), Richardson
patent: 5156987 (1992-10-01), Sandhu et al.
patent: 5177576 (1993-01-01), Kimura et al.
patent: 5192704 (1993-03-01), McDavid et al.
patent: 5202278 (1993-04-01), Mathews et al.
patent: 5216266 (1993-06-01), Ozaki
patent: 5223081 (1993-06-01), Doan
patent: 5229647 (1993-07-01), Gnadinger
patent: 5241211 (1993-08-01), Tashiro
patent: 5254499 (1993-10-01), Sandhu et al.
patent: 5266514 (1993-11-01), Tuan et al.
patent: 5272367 (1993-12-01), Dennison et al.
patent: 5293053 (1994-03-01), Malhi et al.
patent: 5316962 (1994-05-01), Matsuo et al.
patent: 5320880 (1994-06-01), Sandhu et al.
patent: 5365477 (1994-11-01), Cooper, Jr. et al.
patent: 5379255 (1995-01-01), Shah
patent: 5382540 (1995-01-01), Sharma et al.
patent: 5392245 (1995-02-01), Manning
patent: 5414287 (1995-05-01), Hong
patent: 5427972 (1995-06-01), Shimizu et al.
patent: 5432739 (1995-07-01), Pein
patent: 5444013 (1995-08-01), Akram et al.
patent: 5445986 (1995-08-01), Hirota
patent: 5449433 (1995-09-01), Donohoe
patent: 5460988 (1995-10-01), Hong
patent: 5483094 (1996-01-01), Sharma et al.
patent: 5495441 (1996-02-01), Hong
patent: 5508542 (1996-04-01), Geiss et al.
patent: 5519236 (1996-05-01), Ozaki
patent: 5523261 (1996-06-01), Sandhu
patent: 5563083 (1996-10-01), Pein
patent: 5574299 (1996-11-01), Kim
patent: 5599396 (1997-02-01), Sandhu
patent: 5616934 (1997-04-01), Dennison et al.
patent: 5617351 (1997-04-01), Bertin et al.
patent: 5627390 (1997-05-01), Maeda et al.
patent: 5636170 (1997-06-01), Seyyedy
patent: 5640342 (1997-06-01), Gonzalez
patent: 5644540 (1997-07-01), Manning
patent: 5646900 (1997-07-01), Tsukude et al.
patent: 5691230 (1997-11-01), Forbes
patent: 5696008 (1997-12-01), Tamaki et al.
patent: 5705415 (1998-01-01), Orlowski et al.
patent: 5757044 (1998-05-01), Kubota
patent: 5780888 (1998-07-01), Maeda et al.
patent: 5869369 (1999-02-01), Hong
patent: 5874760 (1999-02-01), Burns, Jr. et al.
patent: 5885864 (1999-03-01), Ma
patent: 5888868 (1999-03-01), Yamazaki et al.
patent: 5891773 (1999-04-01), Saitoh
patent: 5907170 (1999-05-01), Forbes et al.
patent: 5909618 (1999-06-01), Forbes et al.
patent: 5936274 (1999-08-01), Forbes et al.
patent: 5952039 (1999-09-01), Hong
patent: 5973352 (1999-10-01), Noble
patent: 5973356 (1999-10-01), Noble et al.
patent: 5991225 (1999-11-01), Forbes et al.
patent: 6013548 (2000-01-01), Burns, Jr. et al.
patent: 6018176 (2000-01-01), Lim
patent: 6034389 (2000-03-01), Burns et al.
patent: 6040218 (2000-03-01), Lam
patent: 6066869 (2000-05-01), Noble et al.
patent: 6072209 (2000-06-01), Noble et al.
patent: 6077745 (2000-06-01), Burns et al.
patent: 6083793 (2000-07-01), Wu
patent: 6090660 (2000-07-01), Noble, Jr.
patent: 6104061 (2000-08-01), Forbes et al.
patent: 6114725 (2000-09-01), Furukawa et al.
patent: 6124729 (2000-09-01), Noble et al.
patent: 6134175 (2000-10-01), Forbes et al.
patent: 6143636 (2000-11-01), Forbes et al.
patent: 6150687 (2000-11-01), Noble et al.
patent: 6150688 (2000-11-01), Maeda et al.
patent: 6153468 (2000-11-01), Forbes et al.
patent: 6174784 (2001-01-01), Forbes
patent: 6184549 (2001-02-01), Furukawa et al.
patent: 6208164 (2001-03-01), Noble et al.
patent: 6211015 (2001-04-01), Noble
patent: 6219299 (2001-04-01), Forbes et al.
patent: 6222788 (2001-04-01), Forbes et al.
patent: 6238976 (2001-05-01), Noble et al.
patent: 6252267 (2001-06-01), Noble, Jr.
patent: 6281054 (2001-08-01), Yeo
patent: 6303425 (2001-10-01), Maeda et al.
patent: 6377070 (2002-04-01), Forbes
patent: 6380765 (2002-04-01), Forbes et al.
patent: 6403494 (2002-06-01), Chu et al.
patent: 6424001 (2002-07-01), Forbes et al.
patent: 6437389 (2002-08-01), Forbes et al.
patent: 6448601 (2002-09-01), Forbes et al.
patent: 6472702 (2002-10-01), Shen
patent: 6486027 (2002-11-01), Noble et al.
patent: 6496034 (2002-12-01), Forbes et al.
patent: 6531727 (2003-03-01), Forbes et al.
patent: 6559491 (2003-05-01), Forbes et al.
patent: 6566682 (2003-05-01), Forbes
patent: 6639268 (2003-10-01), Forbes et al.
patent: 6664806 (2003-12-01), Forbes et al.
patent: 6680508 (2004-01-01), Rudeck
patent: 6689660 (2004-02-01), Noble et al.
patent: 6696724 (2004-02-01), Verhaar
patent: 6720216 (2004-04-01), Forbes
patent: 6881627 (2005-04-01), Forbes et al.
patent: 6890812 (2005-05-01), Forbes et al.
patent: 6894532 (2005-05-01), Forbes et al.
patent: 6903367 (2005-06-01), Forbes
patent: 6995057 (2006-02-01), Forbes et al.
patent: 7015525 (2006-03-01), Forbes et al.
patent: 2003/0008461 (2003-01-01), Forbes et al.
patent: 2003/0042512 (2003-03-01), Gonzalez
patent: 2003/0107402 (2003-06-01), Forbes et al.
patent: 2004/0032773 (2004-02-01), Forbes
patent: 2004/0042256 (2004-03-01), Forbes
patent: 2005/0190617 (2005-09-01), Forbes et al.
patent: 63-066963 (1988-03-01), None
patent: 07-254700 (1995-10-01), None
patent: 07-321228 (1995-12-01), None
Asai, S. , “Technology Challenges for Integration Near and Below 0.1 micrometer”,Proceedings of the IEEE, 85(4), Special Issue on Nanometer-Scale Science & Technology, (Apr. 1997), 505-520.
Blalock, T, N., “A High-speed Sensing Scheme for 1T Dynamic RAMs Utilizing the Clamped Bit-line Sense Amplifier”,IEEE Journal of Solid -State Circuits, 27(4), (Apr. 1992), 618-625.
Bomchil, G. , “Porous Silicon: The Material and its Applications in Silicon-On-Insulator Technologies”,Applied Surface Science, 41/42, (1989), 604-613.
Burnett, D. , “Implications of Fundamental Threshold Voltage Variations for High-Density SRAM and Logic Circuits”,1994 Symposium on VLSI Technology, Digest of Technical Papers, Honolulu, HI, (Jun. 1994), 15-16.
Burnett, D. , “Statistical Threshold-Voltage Variation and its Impact on Supply-Voltage Scaling”,Proceedings SPIE: Microelectronic Device and Multilevel Interconnection Technology, 2636, (1995), 83-90.
De, V. K., “Random MOSFET Parameter Fluctuation Limits to Gigascale Integration (GSI)”,1996 Symposium on VLSI Technology, Digest of Technical Papers, Honolulu, HI, (Jun. 11-13, 1996), 198-199.
Fong, Y. , “Oxides Grown on Textured Single-Crystal Silicon—Dependence on Process and Application in EEPROMs”,IEEE Transactions on Electron Devices, 37(3), (Mar. 1990), pp. 583-590.
Fuse, T. , “A 0.5V 200MHz 1-Stage 32b ALU Using a Body Bias Controlled SOI Pass-Gate Logic”,1997 IEEE International Solid-State Circuits Conference, Digest of Technical Papers, (1997), 286-287.
Gong, S. , “Techniques for reducing
Ahn Kie Y.
Forbes Leonard
Micro)n Technology, Inc.
Nguyen Cuong Q
Schwegman Lundberg & Woessner, P.A.
LandOfFree
Memory having a vertical transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Memory having a vertical transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory having a vertical transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4134770