Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-31
2009-11-10
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S907000, C257S908000
Reexamination Certificate
active
07615815
ABSTRACT:
A cell region layout of a semiconductor device formed by adding active regions in the outermost portion of a cell region, and a method of forming a contact pad using the same are provided. The layout and the method include a first active region formed at the outermost portion of the cell region, and having the same shape as that of an inner active region located inwardly from the outermost portion of the cell region, and a third active region formed by adding at least two second active regions having shapes different from that of an inner active region. Further, an insulating layer fills a portion below a bit line passing the third active region. A lifting phenomenon occurring where an active region is not formed can be prevented by adding the active regions at the outermost portion of the cell region, and a bridge phenomenon occurring when bit lines or a bit line contact and a gate line electrically contact can be suppressed by filling a portion below a bit line with an insulating layer.
REFERENCES:
patent: 5783336 (1998-07-01), Aoki et al.
patent: 2000-019709 (2000-01-01), None
patent: 2000-0015029 (2000-03-01), None
patent: 2001-0060441 (2001-07-01), None
Mills & Onello LLP
Nguyen Cuong Q
Samsung Electronics Co,. Ltd.
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