Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2007-02-12
2009-11-03
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S586000, C438S605000, C257SE21621, C257SE21639
Reexamination Certificate
active
07611979
ABSTRACT:
A multilayered gate stack having improved reliability (i.e., low charge trapping and gate leakage degradation) is provided. The inventive multilayered gate stack includes, from bottom to top, a metal nitrogen-containing layer located on a surface of a high-k gate dielectric and Si-containing conductor located directly on a surface of the metal nitrogen-containing layer. The improved reliability is achieved by utilizing a metal nitrogen-containing layer having a compositional ratio of metal to nitrogen of less than 1.1. The inventive gate stack can be useful as an element of a complementary metal oxide semiconductor (CMOS). The present invention also provides a method of fabricating such a gate stack in which the process conditions of a sputtering process are varied to control the ratio of metal and nitrogen within the sputter deposited layer.
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Callegari Alessandro C.
Chudzik Michael P.
Linder Barry P.
Mo Renee T.
Narayanan Vijay
Alexanian Vazken
Ghyka Alexander G
International Business Machines - Corporation
Nikmanesh Seahvosh J
Scully , Scott, Murphy & Presser, P.C.
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