Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2005-06-10

2009-02-03

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S130000, C438S385000, C438S600000

Reexamination Certificate

active

07485559

ABSTRACT:
A semiconductor device and methods thereof. The semiconductor device includes a first layer formed on a substrate, the first layer having a higher conductivity. The semiconductor device further includes a second layer formed on the first layer, the second layer including a hole exposing a portion of the first layer, the exposed portion of the first layer having a lower conductivity. The method includes forming a first layer on a substrate, the first layer having a higher conductivity, forming a second layer on the first layer, exposing a portion of the first layer by forming a hole in the second layer, performing a process on at least the exposed portion of the first layer, the process decreasing the conductivity of the exposed portion. The exposed portion including the lower conductivity or higher resistivity may block heat from conducting in the first layer.

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Korean Office Action dated Jan. 6, 2006.

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