Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-04-30
2009-06-02
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S620000, C438S621000, C438S622000, C438S623000
Reexamination Certificate
active
07541277
ABSTRACT:
A method for forming a dielectric cap layer over an interconnect layer formed by a back-end-of-the-line (BEOL) interconnect process, the interconnect process including: lithography, reactive ion etching (RIE), metal filling of BEOL conductors, and chemical-mechanical polishing (CMP), wherein a sacrificial material resides between conductors of the interconnect layer, and wherein the dielectric cap layer is made porous through an oxidation process.
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Barth Karl W.
Kumar Kaushik A.
Petrarca Kevin Shawn
Petrus John Charles
Au Bac H
International Business Machines - Corporation
Picardat Kevin M.
Saidman Design Law Group
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