Semiconductor memory device and fabrication method thereof

Details Semiconductor memory device and fabrication method thereof Semiconductor memory device and fabrication method thereof

2007-12-05

2009-12-29

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S246000, C257S301000, C257SE29346, C257SE21681, C257SE21647

Reexamination Certificate

active

07638391

ABSTRACT:
A method for fabricating a semiconductor memory device. A pair of neighboring trench capacitors is formed in a substrate. An insulating layer having a pair of connecting structures therein is formed on the substrate, in which the pair of connecting structures is electrically connected to the pair of neighboring trench capacitors. An active layer is formed on the insulating layer between the pair of connecting structures so as to cover the pair of connecting structures. A pair of gate structures is formed on the active layer to electrically connect to the pair of trench capacitors. A semiconductor memory device is also disclosed.

REFERENCES:
patent: 6472702 (2002-10-01), Shen
patent: 6479852 (2002-11-01), Wu
patent: 2002/0090828 (2002-07-01), Chern et al.

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