Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-11-09
2009-08-11
Dang, Trung (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S589000, C257SE21419
Reexamination Certificate
active
07572703
ABSTRACT:
A method manufactures a vertical-gate MOS transistor integrated in a semiconductor chip having a main surface. The method includes: forming a trench gate extending into the chip from the main surface to a gate depth, by forming a control gate and an insulation layer for insulating the control gate from the chip. Forming the trench gate includes: forming a trench extending into the chip from the main surface to a protection depth less than the gate depth, the trench having a lateral wall and a bottom wall with an edge portion of the lateral wall extending from the main surface being inclined outwardly with respect to the remaining portion of the lateral wall; forming a first auxiliary insulation layer in the trench; removing a bottom wall of the first auxiliary insulation layer; extending the trench to the gate depth; and forming a second auxiliary insulation layer in the trench.
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Annese Marco
Depetro Riccardo
Montanini Pietro
Dang Trung
Iannucci Robert
Jorgenson Lisa K.
Seed IP Law Group PLLC
STMicroelectronics S.r.l.
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