Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2006-09-29

2009-10-27

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE29321

Reexamination Certificate

active

07608508

ABSTRACT:
A method for manufacturing a semiconductor device includes forming a recess with a device separating film and a first hard mask layer so that a pad nitride film for defining a recess gate region may remain with a conventional mask. The method additionally the recess gate region to facilitate a subsequent process for etching a gate electrode without a step difference between the device separating film.

REFERENCES:
patent: 2006/0097314 (2006-05-01), Uchiyama
patent: 1020000045462 (2000-07-01), None
J.Y. Kim et al., “The Breakthrough in data retention time of DRAM using Recess-Channel-Array Transistor (RCAT) for 88nm feature size and beyond”, 2003 Symposium on VLSI Technology Digest of Technical Papers, pp. 11-12.
J.Y. Kim et al., “S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) Technology for 70nm DRAM feature size and beyond”, 2005 Syposium on VLSI Technology Digest of Technical Papers, pp. 34-35.
Sung Min Kim et al., “A Novel Multi-Channel Field Effect Transistor (McFET) on Bulk Si for High Performance Sub-80nm Application”, 2004. IEEE.

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