Method for forming high voltage device and semiconductor device

Details Method for forming high voltage device and semiconductor device Method for forming high voltage device and semiconductor device

2005-12-12

2009-02-03

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S220000, C257SE21642

Reexamination Certificate

active

07485523

ABSTRACT:
The invention is directed to a method for manufacturing a high voltage device. The method comprises steps of providing a substrate and then forming a first doped region having a first conductive type in the substrate. At least two second doped regions having a second conductive type are formed in the substrate, wherein the second doped regions are located adjacent to both sides of the first doped region respectively, and the first doped region is separated from the second doped regions with an isolation region. A gate structure is formed on the substrate between the second doped regions and a source/drain region having the second doped region is formed in the substrate adjacent to both sides of the gate structure.

REFERENCES:
patent: 6096610 (2000-08-01), Alavi et al.
patent: 6420769 (2002-07-01), Patelmo et al.
patent: 6451655 (2002-09-01), Leonardi

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