Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-01-05
2009-10-27
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S625000, C257SE21175, C205S067000, C205S087000, C205S093000, C205S925000, C205S074000, C205S069000, C205S127000, C427S162000, C204S194000
Reexamination Certificate
active
07608538
ABSTRACT:
The present invention is related to a method for forming vertical conductive structures by electroplating. Specifically, a template structure is first formed, which includes a substrate, a discrete metal contact pad located on the substrate surface, an inter-level dielectric (ILD) layer over both the discrete metal contact pad and the substrate, and a metal via structure extending through the ILD layer onto the discrete metal contact pad. Next, a vertical via is formed in the template structure, which extends through the ILD layer onto the discrete metal contact pad. A vertical conductive structure is then formed in the vertical via by electroplating, which is conducted by applying an electroplating current to the discrete metal contact pad through the metal via structure. Preferably, the template structure comprises multiple discrete metal contact pads, multiple metal via structures, and multiple vertical vias for formation of multiple vertical conductive structures.
REFERENCES:
patent: 3791858 (1974-02-01), McPherson et al.
patent: 4933743 (1990-06-01), Thomas et al.
patent: 4962058 (1990-10-01), Cronin et al.
patent: 5034799 (1991-07-01), Tomita et al.
patent: 5149615 (1992-09-01), Chakravorty et al.
patent: 5173442 (1992-12-01), Carey
patent: 5191174 (1993-03-01), Chang et al.
patent: 5329695 (1994-07-01), Traskos et al.
patent: 5386627 (1995-02-01), Booth et al.
patent: 5413962 (1995-05-01), Lur et al.
patent: 5426849 (1995-06-01), Kimbara et al.
patent: 5440805 (1995-08-01), Daigle et al.
patent: 5508938 (1996-04-01), Wheeler
patent: 5539247 (1996-07-01), Cheung et al.
patent: 5675187 (1997-10-01), Numata et al.
patent: 5753539 (1998-05-01), Okazaki
patent: 5792706 (1998-08-01), Michael et al.
patent: 5798559 (1998-08-01), Bothra et al.
patent: 5882963 (1999-03-01), Kerber et al.
patent: 5900668 (1999-05-01), Wollesen
patent: 6037248 (2000-03-01), Ahn
patent: 6081021 (2000-06-01), Gambino et al.
patent: 6081032 (2000-06-01), Wu
patent: 6124198 (2000-09-01), Moslehi
patent: 6194233 (2001-02-01), Bedner et al.
patent: 6207553 (2001-03-01), Buynoski et al.
patent: 6239491 (2001-05-01), Pasch et al.
patent: 6242286 (2001-06-01), Cellarosi
patent: 6245658 (2001-06-01), Buynoski
patent: 6268276 (2001-07-01), Chan et al.
patent: 6277728 (2001-08-01), Ahn et al.
patent: 6307213 (2001-10-01), Huang et al.
patent: 6333255 (2001-12-01), Sekiguchi
patent: 6344125 (2002-02-01), Locke et al.
patent: 6413854 (2002-07-01), Uzoh et al.
patent: 6501180 (2002-12-01), Kitch
patent: 6525921 (2003-02-01), Nakatani et al.
patent: 6534723 (2003-03-01), Asai et al.
patent: 6667552 (2003-12-01), Buynoski
patent: 6709562 (2004-03-01), Andricacos et al.
patent: 6710443 (2004-03-01), Rost et al.
patent: 6713835 (2004-03-01), Horak et al.
patent: 6784478 (2004-08-01), Merchant et al.
patent: 6806096 (2004-10-01), Kim et al.
patent: 6806551 (2004-10-01), Liu et al.
patent: 6881999 (2005-04-01), Lee et al.
patent: 6897148 (2005-05-01), Halahan et al.
patent: 6930256 (2005-08-01), Huemoeller et al.
patent: 6940170 (2005-09-01), Parikh
patent: 6984892 (2006-01-01), Gotkis et al.
patent: 6998327 (2006-02-01), Danielson et al.
patent: 7060604 (2006-06-01), Kata et al.
patent: 7064439 (2006-06-01), Berthold et al.
patent: 7091611 (2006-08-01), Ahn et al.
patent: 7108797 (2006-09-01), Chen et al.
patent: 7151051 (2006-12-01), He et al.
patent: 7172980 (2007-02-01), Torres et al.
patent: 7185426 (2007-03-01), Hiner et al.
patent: 7233066 (2007-06-01), Kata et al.
patent: 7247524 (2007-07-01), Nakagawa
patent: 7260890 (2007-08-01), White et al.
patent: 7262505 (2007-08-01), Ahn et al.
patent: 7329953 (2008-02-01), Tu
patent: 7411306 (2008-08-01), Leu et al.
patent: 2001/0014526 (2001-08-01), Clevenger et al.
patent: 2001/0023986 (2001-09-01), Mancevski
patent: 2002/0158337 (2002-10-01), Babich et al.
patent: 2002/0164840 (2002-11-01), Lu et al.
patent: 2003/0073302 (2003-04-01), Huibers
patent: 2003/0154583 (2003-08-01), Fujii et al.
patent: 2004/0101663 (2004-05-01), Agarwala et al.
patent: 2006/0012052 (2006-01-01), McDevitt et al.
patent: 2006/0022286 (2006-02-01), Leuschner et al.
patent: 2007/0128868 (2007-06-01), Halahan et al.
patent: 2007/0228559 (2007-10-01), Tsuruko
patent: 2008/0142253 (2008-06-01), Salama et al.
Parkin, S. S. P. et al., Oscillations in Exchange Coupling and Magnetoresistance in Metallic Superlattice Structures: Co/Ru, Co/Cr, and Fe/Cr, The American Physical Society, 1990, pp. 2304-2308, Vol. 64, No. 19.
Parkin S. S. P., Oscillations in Giant Magnetoresistance and Antiferromagnetic Coupling in [Ni81Fe19/Cu]N Multilaters, Appl. Phys. Lett., Jan. 27, 1992, pp. 512-514, vol. 60, No. 4.
Jimbo, Mutsuko, Giant Magnetoresistance in FeNiCO / Cu Multilayers, Jpn. J. Appl. Phys., Sep. 15, 1992, pp. L 1348-L 1350, vol. 31, Part 2, No. 9B.
Alper, M. et al., Giant Magnetoresistance in Electrodeposited Superlattices, Appl. Phys. Lett, Oct. 11, 1993, pp. 2144-2146, vol. 63, No. 15.
Ross, C. A. , Electrodeposited Multilayer Thin Films, Annu. Rev. Mater. Sci., 1994, pp. 159-188, Vol. 24, downloaded from arjournals.annualreviews.org.
Martin, Charles R., Nanomaterials: A Membrane-Based Synthetic Approach, Science, New Series, Dec. 23, 1994, pp. 1961-1966, vol. 266, No. 5193, downloaded from www.jstor.org.
Deligianni Hariklia
Huang Qiang
Hummel John P.
Romankiw Lubomyr T.
Rothwell Mary B.
International Business Machines - Corporation
Richards N Drew
Scully , Scott, Murphy & Presser, P.C.
Singal Ankush K
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