Method of manufacturing flash memory device

Details Method of manufacturing flash memory device Method of manufacturing flash memory device

2006-05-25

2009-08-11

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S262000, C438S265000, C438S303000, C438S305000, C438S683000, C257SE21244, C257SE21625, C257SE21689, C257SE27081, C257SE27103, C257SE29129, C257SE29165

Reexamination Certificate

active

07572697

ABSTRACT:
A method of manufacturing flash memory devices wherein, after gate lines are formed, an HDP oxide film having at least the same height as that of a floating gate is formed between the gate lines. Spacers are formed between the remaining spaces using a nitride film. Accordingly, the capacitance between the floating gates can be lowered. After an ion implantation process is performed, spacers can be removed. It is therefore possible to secure contact margin of the device.

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