Semiconductor device and method for fabricating the same

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S003000, C438S207000, C438S227000, C438S258000, C438S393000, C257SE21009, C257SE21648, C257SE21660, C257SE21661, C257SE21668

Reexamination Certificate

active

07550344

ABSTRACT:
A semiconductor device includes: a lower hydrogen-barrier film; a capacitor formed on the lower hydrogen-barrier film and including a lower electrode, a capacitive insulating film, and an upper electrode; an interlayer dielectric film formed so as to cover the periphery of the capacitor; and an upper hydrogen-barrier film covering the top and lateral portions of the capacitor. An opening, which exposes the lower hydrogen-barrier film where the lower hydrogen-barrier film is located around the capacitor, and which is tapered and flares upward, is formed in the interlayer dielectric film, and the upper hydrogen-barrier film is formed along the lateral and bottom faces of the opening, and is in contact with the lower hydrogen-barrier film in the opening.

REFERENCES:
patent: 6211035 (2001-04-01), Moise et al.
patent: 6249014 (2001-06-01), Bailey
patent: 6316275 (2001-11-01), Hopfner
patent: 6388281 (2002-05-01), Jung et al.
patent: 6395612 (2002-05-01), Amanuma
patent: 6509601 (2003-01-01), Lee et al.
patent: 6611014 (2003-08-01), Kanaya et al.
patent: 6723598 (2004-04-01), Lim et al.
patent: 6730951 (2004-05-01), Nagano et al.
patent: 6750492 (2004-06-01), Mikawa et al.
patent: 6818457 (2004-11-01), Suzuki
patent: 2001/0015430 (2001-08-01), Hartner et al.
patent: 2002/0149041 (2002-10-01), Lee
patent: 2004/0084701 (2004-05-01), Kanaya et al.
patent: 1 113 493 (2001-07-01), None
patent: 11-8355 (1999-01-01), None
patent: 11-126881 (1999-05-01), None
patent: 2001-007303 (2001-01-01), None
patent: 2001-036026 (2001-02-01), None
patent: 2001-237393 (2001-08-01), None
patent: 2003-086771 (2003-03-01), None
patent: 2003-174145 (2003-06-01), None
patent: 2001-85573 (2001-09-01), None
European Office Action issued in European Patent Application No. EP 03 02 6150, dated Jun. 15, 2007.

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