Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-08-10
2009-06-23
Tran, Long K (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S003000, C438S207000, C438S227000, C438S258000, C438S393000, C257SE21009, C257SE21648, C257SE21660, C257SE21661, C257SE21668
Reexamination Certificate
active
07550344
ABSTRACT:
A semiconductor device includes: a lower hydrogen-barrier film; a capacitor formed on the lower hydrogen-barrier film and including a lower electrode, a capacitive insulating film, and an upper electrode; an interlayer dielectric film formed so as to cover the periphery of the capacitor; and an upper hydrogen-barrier film covering the top and lateral portions of the capacitor. An opening, which exposes the lower hydrogen-barrier film where the lower hydrogen-barrier film is located around the capacitor, and which is tapered and flares upward, is formed in the interlayer dielectric film, and the upper hydrogen-barrier film is formed along the lateral and bottom faces of the opening, and is in contact with the lower hydrogen-barrier film in the opening.
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European Office Action issued in European Patent Application No. EP 03 02 6150, dated Jun. 15, 2007.
Fujii Eiji
Ito Toyoji
Umeda Kazuo
McDermott Will & Emery LLP
Panasonic Corporation
Tran Long K
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