Method of producing semiconductor memory

Details Method of producing semiconductor memory Method of producing semiconductor memory

2008-12-04

2009-12-01

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S151000, C438S279000, C438S412000, C438S479000

Reexamination Certificate

active

07625798

ABSTRACT:
A semiconductor memory includes a plurality of memory cell transistors each having a laminated gate. A method of producing the semiconductor memory includes the steps of: forming a plurality of element separation regions for separating the memory cell transistors; forming a first conductive layer through a gate oxide film; etching the first conductive layer to form a plurality of slits; forming spacers on sidewall portions of each of the slits; forming a second conductive layer through an insulating film; etching the first conductive layer, the second conductive layer, and the insulating film using one single mask to form the laminated gate; implanting a conductive impurity into the semiconductor substrate exposed on both sides of the laminated gate to form a drain/source region; forming an interlayer insulating film; forming a contact hole penetrating the interlayer insulating film to reach the semiconductor substrate.

REFERENCES:
patent: 5559048 (1996-09-01), Inoue
patent: 6500710 (2002-12-01), Nakagawa
patent: 03-052267 (1991-03-01), None
patent: 03-126266 (1991-05-01), None
patent: 2004-055657 (2004-02-01), None

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