Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-07-01
2009-11-10
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S259000, C438S271000, C438S272000, C438S481000, C257SE21566
Reexamination Certificate
active
07615452
ABSTRACT:
A normally-off HEMT is made by first providing a substrate having its surface partly covered with an antigrowth mask. Gallium nitride is grown by epitaxy on the masked surface of the substrate to provide an electron transit layer comprised of two flat-surfaced sections and a V-notch-surfaced section therebetween. The flat-surfaced sections are formed on unmasked parts of the substrate surface whereas the V-notch-surfaced section, defining a V-sectioned notch, is created by lateral overgrowth onto the antigrowth mask. Aluminum gallium nitride is then deposited on the electron transit layer to provide an electron supply layer which is likewise comprised of two flat-surfaced sections and a V-notch-surfaced section therebetween. The flat-surfaced sections of the electron supply layer are sufficiently thick to normally generate two-dimensional electron gas layers due to heterojunctions thereof with the first and the second flat-surfaced section of the electron transit layer. The V-notch-surfaced section of the electron supply layer is not so thick, normally creating an interruption in the two-dimensional electron gas layer.
REFERENCES:
patent: 6008126 (1999-12-01), Leedy
patent: 6927155 (2005-08-01), Lugauer et al.
patent: 7399687 (2008-07-01), Hiramatsu et al.
patent: 2004/0266157 (2004-12-01), Lugauer et al.
patent: 2005/0093099 (2005-05-01), Koike et al.
patent: 2005/0161702 (2005-07-01), Linthicum et al.
patent: 2006/0213429 (2006-09-01), Motoki et al.
patent: 2006/0273343 (2006-12-01), Nakahata et al.
patent: 2008/0006201 (2008-01-01), Hirota et al.
patent: 2008/0202409 (2008-08-01), Motoki et al.
patent: 2009/0071394 (2009-03-01), Nakahata et al.
patent: 2009/0085055 (2009-04-01), Peng et al.
patent: 2005158889 (2005-06-01), None
patent: 2005183733 (2005-07-01), None
patent: 2006100820 (2006-04-01), None
Parker John M
Sanken Electric Co. Ltd.
Smith Matthew
Woodcock & Washburn LLP
LandOfFree
Method of fabrication of normally-off field-effect... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabrication of normally-off field-effect..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabrication of normally-off field-effect... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4121197