Porous and dense hybrid interconnect structure and method of...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S639000, C257S758000, C257S760000

Reexamination Certificate

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07544608

ABSTRACT:
A method for manufacturing a structure includes depositing a dense dielectric over the entire wafer, which includes areas that require low dielectric capacitance and areas that require high mechanical strength. The method further includes masking areas of the dense dielectric over the areas that require high mechanical strength and curing unmasked areas of the dense dielectric to burn out porogens inside the dense dielectric and transform the unmasked areas of the dense dielectric to porous dielectric material. A semiconductor structure comprises porous and dense hybrid interconnects for high performance and reliability semiconductor applications.

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