Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-30
2009-02-17
Nguyen, Tuan T (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S320000, C257S319000, C257S316000
Reexamination Certificate
active
07492002
ABSTRACT:
A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select gate electrode inducing charge introduction through the gate insulation layer, and a control gate electrode inducing charge tunneling occurring through the tunnel insulation layer. The select gate electrode is insulated from the control gate electrode. According to the non-volatile memory device, a select gate electrode and a control gate electrode are formed on a floating gate, and thus a voltage is applied to the respective gate electrodes to write and erase data.
REFERENCES:
patent: 5394360 (1995-02-01), Fukumoto
patent: 6525369 (2003-02-01), Wu
patent: 6562673 (2003-05-01), Lin
patent: 6635533 (2003-10-01), Chang et al.
patent: 6787418 (2004-09-01), Chu et al.
patent: 7265411 (2007-09-01), Kang
patent: 2003/0198086 (2003-10-01), Shukuri
patent: 1-248670 (1989-10-01), None
patent: 2001-085544 (2001-03-01), None
patent: 10-2002-0044702 (2002-06-01), None
patent: 2002-0014275 (2008-07-01), None
Han Jeong-Uk
Jeon Hee-Seog
Kim Yong-Tae
Yoon Seung-Beom
Bernstein Allison P
F. Chau & Associates LLC.
Nguyen Tuan T
Samsung Electronics Co,. Ltd.
LandOfFree
Non-volatile memory device with a select gate electrode and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile memory device with a select gate electrode and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory device with a select gate electrode and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4116662