Non-volatile memory device with a select gate electrode and...

Details Non-volatile memory device with a select gate electrode and... Non-volatile memory device with a select gate electrode and...

2005-12-30

2009-02-17

Nguyen, Tuan T (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S320000, C257S319000, C257S316000

Reexamination Certificate

active

07492002

ABSTRACT:
A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select gate electrode inducing charge introduction through the gate insulation layer, and a control gate electrode inducing charge tunneling occurring through the tunnel insulation layer. The select gate electrode is insulated from the control gate electrode. According to the non-volatile memory device, a select gate electrode and a control gate electrode are formed on a floating gate, and thus a voltage is applied to the respective gate electrodes to write and erase data.

REFERENCES:
patent: 5394360 (1995-02-01), Fukumoto
patent: 6525369 (2003-02-01), Wu
patent: 6562673 (2003-05-01), Lin
patent: 6635533 (2003-10-01), Chang et al.
patent: 6787418 (2004-09-01), Chu et al.
patent: 7265411 (2007-09-01), Kang
patent: 2003/0198086 (2003-10-01), Shukuri
patent: 1-248670 (1989-10-01), None
patent: 2001-085544 (2001-03-01), None
patent: 10-2002-0044702 (2002-06-01), None
patent: 2002-0014275 (2008-07-01), None

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