Method for four direction low capacitance ESD protection

Details Method for four direction low capacitance ESD protection Method for four direction low capacitance ESD protection

2007-01-12

2009-02-03

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29024

Reexamination Certificate

active

07485930

ABSTRACT:
The invention describes a structure and a process for providing ESD semiconductor protection with reduced input capacitance. The structure consists of heavily doped P+ guard rings surrounding the I/O ESD protection device and the Vcc to Bss protection device. In addition, there is a heavily doped N+ guard ring surrounding the I/O protection device its P+ guard ring. The guard rings enhance structure diode elements providing enhanced ESD energy discharge path capability enabling the elimination of a specific conventional Vss to I/O pad ESD protection device. This reduces the capacitance seen by the I/O circuit while still providing adequate ESD protection for the active circuit devices.

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