Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-12
2009-11-24
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S324000, C257SE21495, C257SE23141, C438S627000
Reexamination Certificate
active
07622762
ABSTRACT:
A nonvolatile semiconductor memory includes a first semiconductor layer; second semiconductor regions formed on the first semiconductor layer having device isolating regions extended in a column direction; a first interlayer insulator film formed above the first semiconductor layer; a lower conductive plug connected to the second semiconductor regions; a first interconnect extended in a row direction; a second interlayer insulator formed on the lower conductive plug and the first interlayer insulator film; an upper conductive plug; and a second interconnect formed on the second interlayer insulator contacting with the top of the upper conductive plug extended in the column direction.
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Notification of Reason(s) for Refusal mailed on Jul. 28, 2009, by the Japanese Patent Office in copending Application No. 2003-197095 and English language translation thereof.
Goda Akira
Kajimoto Minori
Noguchi Mitsuhiro
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Fox Brandon
Kabushiki Kaisha Toshiba
Vu David
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