Static random-access memory having reduced bit line...

Static information storage and retrieval – Read/write circuit – Precharge

Reexamination Certificate

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C365S154000, C365S185250

Reexamination Certificate

active

07570527

ABSTRACT:
A bit line precharge circuit, a method of precharging a bit line and an SRAM device incorporating the circuit or the method. In one embodiment, the bit line precharge circuit includes: (1) a word line driver coupled to word lines of the SRAM array and configured to operate at a word line driver voltage and (2) a bit line precharge circuit coupled to bit lines of the SRAM array and configured to precharge the bit lines to a precharge voltage substantially lower than the word line driver voltage.

REFERENCES:
patent: 6100748 (2000-08-01), Oh
patent: 6185140 (2001-02-01), Agrawal
patent: 6515893 (2003-02-01), Bhavnagarwala
patent: 6751111 (2004-06-01), Foss et al.
patent: 6819612 (2004-11-01), Achter
patent: 6888768 (2005-05-01), Sugio
patent: 6901016 (2005-05-01), Miyashita et al.
patent: 2003/0202405 (2003-10-01), Shau
patent: 2004/0001378 (2004-01-01), Madan et al.
patent: 2004/0095171 (2004-05-01), Kang
patent: 2004/0159905 (2004-08-01), Sato
patent: 2005/0162894 (2005-07-01), Itoh et al.

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