Semiconductor device with constricted current passage

Details Semiconductor device with constricted current passage Semiconductor device with constricted current passage

2007-10-15

2009-08-04

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S178000, C438S199000, C438S202000, C438S217000, C438S218000, C438S230000, C438S257000, C257SE21638, C257SE21696

Reexamination Certificate

active

07569445

ABSTRACT:
A semiconductor device including a gate located over a semiconductor substrate and a source/drain region located adjacent the gate. The source/drain region is bounded by an isolation structure that includes a constricted current passage between the gate and the source/drain region.

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