Transistors with increased mobility in the channel zone and...

Details Transistors with increased mobility in the channel zone and... Transistors with increased mobility in the channel zone and...

2004-06-28

2009-02-17

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S192000, C257S194000, C257S347000, C257S401000, C257S402000, C257S408000, C257S745000, C438S142000, C438S197000

Reexamination Certificate

active

07491988

ABSTRACT:
A semiconductor transistor structure with increased mobility in the channel zone and a method of its fabrication are described. A semiconductor substrate having a first dopant is formed. A diffusion barrier layer having a second dopant is formed on the semiconductor substrate to suppress outdiffusion of the first dopant. Next, a semiconductor layer having substantially low dopant concentration relative to the first layer is epitaxially grown on the diffusion barrier layer. The semiconductor layer defines a channel in the semiconductor transistor structure. The low dopant concentration in the semiconductor layer increases the mobility of the carriers in the channel of the semiconductor transistor structure. A gate electrode and a gate dielectric are formed on the semiconductor layer with the low dopant concentration.

REFERENCES:
patent: 6271551 (2001-08-01), Schmitz et al.
patent: 2004/0099901 (2004-05-01), Ludwig
patent: 2004/0256639 (2004-12-01), Ouyang
patent: 2005/0093154 (2005-05-01), Kottantharayil
patent: 2005/0250289 (2005-11-01), Babcock et al.
H. Rucker et al., “Suppressed diffusion of boron and carbon in carbon-rich silicon”, Applied Physics Letters, vol. 73, No. 12, Sep. 21, 1998, pp. 1682-1684, American Institute of Physics 1998.

Affiliated with

Also associated with

Rating

Transistors with increased mobility in the channel zone and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transistors with increased mobility in the channel zone and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistors with increased mobility in the channel zone and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4113812