Non-volatile memory device and a method of fabricating the same

Details Non-volatile memory device and a method of fabricating the same Non-volatile memory device and a method of fabricating the same

2007-02-22

2009-11-24

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S324000, C438S257000

Reexamination Certificate

active

07622765

ABSTRACT:
A non-volatile memory device and a method of fabricating the same are provided. A non-volatile memory device may include a semiconductor substrate including a body and at least one pair of fins vertically protruding from the body and spaced apart from each other, and at least one control gate electrode on at least portions of outer side surfaces of the at least one pair of fins and extending onto top portions of the at least one pair of fins on an angle with the at least one pair of fins. The non-volatile memory device may further include at least one pair of gate insulating layers between the at least one control gate electrode and the at least one pair of fins, and at least one pair of storage node layers between the at least one pair of gate insulating layers and at least a portion of the at least one control gate electrode. The at least one control gate electrode may extend onto top portions of the at least one pair of fins in a zigzag fashion.

REFERENCES:
patent: 6664582 (2003-12-01), Fried et al.
patent: 6876042 (2005-04-01), Yu et al.
patent: 7224019 (2007-05-01), Hieda et al.

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