Methods of forming NAND memory with virtual channel

Details Methods of forming NAND memory with virtual channel Methods of forming NAND memory with virtual channel

2007-01-24

2009-02-24

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S266000, C257SE21682, C257SE27103

Reexamination Certificate

active

07494870

ABSTRACT:
A string of nonvolatile memory cells are connected together by source/drain regions that include an inversion layer created by fixed charge in an overlying layer. Control gates extend between floating gates so that two control gates couple to a floating gate. A fixed charge layer may be formed by plasma nitridation.

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