Process to create buried heavy metal at selected depth

Details Process to create buried heavy metal at selected depth Process to create buried heavy metal at selected depth

2002-11-04

2009-02-03

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S610000, C257S131000, C257S156000, C257S590000, C257SE29027

Reexamination Certificate

active

07485920

ABSTRACT:
Semiconductor devices having recombination centers comprised of well-positioned heavy metals. At least one lattice defect region within the semiconductor device is first created using particle beam implantation. Use of particle beam implantation positions the lattice defect region(s) with high accuracy in the semiconductor device. A heavy metal implantation treatment of the device is applied. The lattice defects created by the particle beam implantation act as gettering sites for the heavy metal implantation. Thus, after the creation of lattice defects and heavy metal diffusion, the heavy metal atoms are concentrated in the well-positioned lattice defect region(s).

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