Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1993-04-01
1996-09-17
Nguyen, Nam
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
20429834, 20429838, 20429837, C23F 102
Patent
active
055565018
ABSTRACT:
A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.
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Collins Kenneth S.
Groechel David W.
Ishikawa Tetsuya
Keswick Peter R.
Lei Lawrence C.
Applied Materials Inc.
Morris Birgit
Nguyen Nam
Sgarbossa Peter J.
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