Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2007-07-19

2009-10-20

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C257S344000, C257SE21409

Reexamination Certificate

active

07605038

ABSTRACT:
A high voltage semiconductor deice and a manufacturing method thereof are provided. The high voltage semiconductor device comprises: second conductive type drift regions disposed spaced from each other on a first conductive type well region formed on a first conductive type semiconductor substrate; a gate electrode on a channel region between the second conductive type drift regions with a gate insulating film disposed therebetween; second conductive type high-concentration source and drain each disposed in the second conductive type drift regions, spaced from a side of a gate electrode; a gate spacer having a spacer part covering the side of the gate electrode and a spacer extending part to cover a spaced portion of the second conductive type high-concentration source and drain from the side of the gate electrode; and a silicide formed on the gate electrode and the second conductive type high-concentration source and drain.

REFERENCES:
patent: 4769686 (1988-09-01), Horiuchi et al.
patent: 6265274 (2001-07-01), Huang et al.
patent: 2002/0098652 (2002-07-01), Mori et al.
patent: 2007/0010052 (2007-01-01), Huang et al.

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