Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-08
2009-08-04
Pizarro, Marcos D. (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S682000, C438S592000, C257SE21199, C257SE21165
Reexamination Certificate
active
07569483
ABSTRACT:
Methods of forming metal silicide layers include a convection-based annealing step to convert a metal layer into a metal silicide layer. These methods may include forming a silicon layer on a substrate and forming a metal layer (e.g., nickel layer) in direct contact with the silicon layer. A step is then performed to convert at least a portion of the metal layer into a metal silicide layer. This conversion step is includes exposing the metal layer to an inert heat transferring gas (e.g., argon, nitrogen) in a convection or conduction apparatus.
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Choi Gil-Heyun
Jung Eun-Ji
Jung Sug-Woo
Kim Hyun-Su
Roh Kwan-Jong
Anya Igwe U.
Myers Bigel & Sibley & Sajovec
Pizarro Marcos D.
Samsung Electronics Co,. Ltd.
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