Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-04-12
2009-06-16
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S304000, C257SE21683
Reexamination Certificate
active
07547602
ABSTRACT:
A method of manufacturing a semiconductor integrated circuit device is provided including providing a substrate with projecting island regions formed in stripes, with first regions of the substrate adjacent the projecting island regions and with a conductive film covering the projecting island regions and first regions. An insulating film is formed between the projecting island regions and conductive film, wherein the projecting island regions extend in a first direction in stripes. The conductive film is anisotropically etched using a mask covering contact regions to form conductive lines on sides of the projecting island regions and the contact regions integrated with the conductive lines, which conductive lines serve as common gate electrodes for MISFETs.
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Antonelli, Terry Stout & Kraus, LLP.
Chaudhari Chandra
Renesas Technology Corp.
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